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Abstract

Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously. The motivation behind this decrease has been an increasing interest in high-speed devices and in very large-scale integrated circuits.

Description of FinFET Technology


The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. The limits most often cited are control of the density and location of dopants providing high I on /I off ratio and finite sub threshold slope and quantum-mechanical tunneling of carriers through thin gate from drain to source and from drain to body. The channel depletion width must scale with the channel length to contain the off-state leakage I off.

This leads to high doping concentration, which degrade the carrier mobility and causes junction edge leakage due to tunneling. Furthermore, the dopant profile control, in terms of depth and steepness, becomes much more difficult. The gate oxide thickness tox must also scale with the channel length to maintain gate control, proper threshold voltage VT and performance. The thinning of the gate dielectric results in gate tunneling leakage, degrading the circuit performance, power and noise margin. Alternative device structures based on silicon-on-insulator (SOI) technology have emerged as an effective means of extending MOS scaling beyond bulk limits for mainstream high-performance or low-power applications.

Partially depleted (PD) SOIwas the first SOI technology introduced for high-performance microprocessor applications. The ultra-thin-body fully depleted (FD) SOI and the non-planar FinFET device structures promise to be the potential "future" technology/device choices. In these device structures, the short-channel effect is controlled by geometry, and the thin Si film limits the off-state leakage.

 

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